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TYN812 датащит (PDF) 2 Page - STMicroelectronics

№ деталь TYN812
подробность  Sensitive and standard 12 A SCRs
скачать  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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TYN812 Datasheet(HTML) 2 Page - STMicroelectronics

 
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Characteristics
TN1215, TS1220, TYN612, TYN812, TYN1012
2/13
Doc ID 7475 Rev 7
1
Characteristics
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
TN1215-G
TYNx12
TN1215-B/-H
TS1220-B/-H/T
IT(RMS)
RMS on-state current (180 °Conduction angle)
Tc = 105 °C
12
A
IT(AV)
Average on-state current (180 °Conduction angle)
Tc = 105 °C
8
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
Tj = 25 °C
145
115
A
tp = 10 ms
140
110
I²tI²t Value for fusing
tp = 10 ms
Tj = 25 °C
98
60
A2S
dI/dt
Critical rate of rise of on-state
current IG = 2 x IGT, tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 125 °C
1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
VRGM
Maximum peak reverse gate voltage
(for TN1215 and TYNx12 only)
5V
Table 3.
Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TS1220
Unit
IGT
VD = 12 V, RL = 140 Ω
MAX.
200
µA
VGT
MAX.
0.8
V
VGD
VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω
Tj = 125 °C
MIN.
0.1
V
VRG
IRG = 10 µA
MIN.
8
V
IH
IT = 50 mA, RGK = 1 kΩ
MAX.
5
mA
IL
IG = 1 mA, RGK = 1 kΩ
MAX.
6
mA
dV/dt
VD = 65 % VDRM, RGK = 220 Ω
Tj = 125 °C
MIN.
5
V/µs
VTM
ITM = 24 A, tp = 380 µs
Tj = 25 °C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
30
m
Ω
IDRM
IRRM
VDRM = VRRM, RGK = 220 Ω
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
2
mA


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