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FQD13N06LTM датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FQD13N06LTM
подробное описание детали  N-Channel QFET짰 MOSFET 60 V, 11 A, 115 m廓
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD13N06LTM датащи(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQD13N06L
FQD13N06LTM
D-PAK
330 mm
16 mm
2500 units
©2000 Fairchild Semiconductor Corporation
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com
2

1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC.
3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.
4. Essentially independent of operating temperature.
Packing Method
Tape and Reel
FQU13N06L
FQU13N06LTU
I-PAK
N/A
N/A
70 units
Tube
Electrical Characteristics T
C = 25
oC unless otherwise noted.
FQU13N06LS
FQU13N06LTU_WS
I-PAK
N/A
N/A
75 units
Tube
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
60
--
--
V
BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.05
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
--
--
1
µ
A
VDS = 48 V, TC = 150°C
--
--
10
µ
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.5
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 5.5 A
VGS= 5 V, ID= 5.5 A
--
--
0.092
0.115
0.115
0.145
gFS
Forward Transconductance
VDS = 25 V, ID = 5.5 A
--
6
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
270
350
pF
Coss
Output Capacitance
--
95
125
pF
Crss
Reverse Transfer Capacitance
--
17
23
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 30 V, ID = 6.8 A,
RG = 25 Ω
--
8
25
ns
tr
Turn-On Rise Time
--
90
190
ns
td(off)
Turn-Off Delay Time
--
20
50
ns
tf
Turn-Off Fall Time
--
40
90
ns
Qg
Total Gate Charge
VDS = 48 V, ID = 13.6 A,
VGS = 5 V
--
4.8
6.4
nC
Qgs
Gate-Source Charge
--
1.6
--
nC
Qgd
Gate-Drain Charge
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
11
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
44
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 11 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 13.6 A,
dIF / dt = 100 A/µs
--
45
--
ns
Qrr
Reverse Recovery Charge
--
45
--
nC
(Note 4)
(Note 4)


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