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FQD13N06LTM датащи(PDF) 2 Page - Fairchild Semiconductor |
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FQD13N06LTM датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Package Marking and Ordering Information Part Number Top Mark Package Reel Size Tape Width Quantity FQD13N06L FQD13N06LTM D-PAK 330 mm 16 mm 2500 units ©2000 Fairchild Semiconductor Corporation FQD13N06L / FQU13N06L Rev. C3 www.fairchildsemi.com 2 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. Packing Method Tape and Reel FQU13N06L FQU13N06LTU I-PAK N/A N/A 70 units Tube Electrical Characteristics T C = 25 oC unless otherwise noted. FQU13N06LS FQU13N06LTU_WS I-PAK N/A N/A 75 units Tube Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆ BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µ A VDS = 48 V, TC = 150°C -- -- 10 µ A IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.5 A VGS= 5 V, ID= 5.5 A -- -- 0.092 0.115 0.115 0.145 Ω gFS Forward Transconductance VDS = 25 V, ID = 5.5 A -- 6 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 270 350 pF Coss Output Capacitance -- 95 125 pF Crss Reverse Transfer Capacitance -- 17 23 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 6.8 A, RG = 25 Ω -- 8 25 ns tr Turn-On Rise Time -- 90 190 ns td(off) Turn-Off Delay Time -- 20 50 ns tf Turn-Off Fall Time -- 40 90 ns Qg Total Gate Charge VDS = 48 V, ID = 13.6 A, VGS = 5 V -- 4.8 6.4 nC Qgs Gate-Source Charge -- 1.6 -- nC Qgd Gate-Drain Charge -- 2.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 11 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 44 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 13.6 A, dIF / dt = 100 A/µs -- 45 -- ns Qrr Reverse Recovery Charge -- 45 -- nC (Note 4) (Note 4) |
Аналогичный номер детали - FQD13N06LTM |
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Аналогичное описание - FQD13N06LTM |
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