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STP30NM50N датащи(PDF) 3 Page - STMicroelectronics

номер детали STP30NM50N
подробное описание детали  N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STB/I/F/P/W30NM50N
Electrical ratings
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
VDS
Drain-source voltage (VGS=0)
500
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
27
27 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
17
17(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
108
108 (1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
dv/dt (3)
3.
ISD ≤ 27 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
--
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
I²PAK TO-220 D²PAK TO-220FP TO-247 Unit
Rthj-case
Thermal resistance junction-
case max
0.66
3.1
0.66
°C/W
Rthj-pcb
Thermal resistance junction-
pcb max
--
--
30
--
--
°C/W
Rthj-amb
Thermal resistance junction-
amb max
62.5
--
62.5
50
°C/W
Tl
Maximum lead temperature for
soldering purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
12
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
900
mJ
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