поискавой системы для электроныых деталей |
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TA44914W датащи(PDF) 2 Page - Dynex Semiconductor |
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TA44914W датащи(HTML) 2 Page - Dynex Semiconductor |
2 / 12 page TA449..W 2/12 THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.133 Anode dc Clamping force 5.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.02 Double side - 125 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 4.5 5.5 kN -40 150 oC - On-state (conducting) - 135 oC - 0.04 oC/W oC/W Cathode dc - 0.154 oC/W Double side cooled - 0.07 oC/W DYNAMIC CHARACTERISTICS V TM Parameter Symbol Conditions Maximum on-state voltage At 600A peak, T case = 125 oC I RRM Peak reverse current At V RRM, Tcase = 125 oC Gate source 20V, 20 Ω t r ≤ 5µs. dV/dt Maximum linear rate of rise of off-state voltage To 60% V DRM Tj = 125 oC, Gate open circuit Typ. Max. Units - 2.9 V -40 mA - 1000 V/ µs - 1000 A/ µs Rate of rise of on-state current dI/dt t q Max. turn-off time VR = DF451 voltage drop, T j = 125 oC, I TM = 200A, dV/dt = 400V/ µs (linear to 60% V DRM), tdI R/dt = 30A/µs Gate open. 10 - µs I DRM Off-state current At V DRM, Tcase = 125 oC- 1 mA Non-repetitive - 500 A/ µs Repetitive t gt Typ. turn-on time (total) T j = 25 oC, I T = 50A, V D = 300V, IG = 1A, dI/dt = 50A/µs, dI G/dt = 1A/µs - 3 µs I H Holding current T j = 25 oC, I TM = 1A, VD = 12V - 80 mA I L Latching current T j = 25 oC, I G = 0.5A, VD = 12V - 300 mA t gd Typ. delay time - 1.5 µs |
Аналогичный номер детали - TA44914W |
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Аналогичное описание - TA44914W |
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