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TA44914W датащи(PDF) 2 Page - Dynex Semiconductor

номер детали TA44914W
подробное описание детали  Asymmetric Thyristor
Download  12 Pages
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производитель  DYNEX [Dynex Semiconductor]
домашняя страница  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

TA44914W датащи(HTML) 2 Page - Dynex Semiconductor

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TA449..W
2/12
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
oC/W
-
0.133
Anode dc
Clamping force 5.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
oC
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
4.5
5.5
kN
-40
150
oC
-
On-state (conducting)
-
135
oC
-
0.04
oC/W
oC/W
Cathode dc
-
0.154
oC/W
Double side cooled
-
0.07
oC/W
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case = 125
oC
I
RRM
Peak reverse current
At V
RRM, Tcase = 125
oC
Gate source 20V, 20
t
r ≤ 5µs.
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM Tj = 125
oC, Gate open circuit
Typ.
Max.
Units
-
2.9
V
-40
mA
-
1000
V/
µs
-
1000
A/
µs
Rate of rise of on-state current
dI/dt
t
q
Max. turn-off time
VR = DF451 voltage drop,
T
j = 125
oC, I
TM = 200A,
dV/dt = 400V/
µs (linear to 60% V
DRM),
tdI
R/dt = 30A/µs Gate open.
10
-
µs
I
DRM
Off-state current
At V
DRM, Tcase = 125
oC-
1
mA
Non-repetitive
-
500
A/
µs
Repetitive
t
gt
Typ. turn-on time (total)
T
j = 25
oC, I
T = 50A,
V
D = 300V, IG = 1A, dI/dt = 50A/µs,
dI
G/dt = 1A/µs
-
3
µs
I
H
Holding current
T
j = 25
oC, I
TM = 1A, VD = 12V
-
80
mA
I
L
Latching current
T
j = 25
oC, I
G = 0.5A, VD = 12V
-
300
mA
t
gd
Typ. delay time
-
1.5
µs


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