FCB36N60N datasheet(4/8 Pages) FAIRCHILD

номер детали	FCB36N60N

подробное описание детали	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓

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4

FCB36N60N Rev. C0

t1

PDM

t2

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation

vs. Temperature

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-80

-40

0

40

80

120

160

0.8

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 1mA

TJ, Junction Temperature [

o

C]

-80

-40

0

40

80

120

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 18A

TJ, Junction Temperature [

o

C]

25

50

75

100

125

150

0

10

20

30

40

TC, Case Temperature [

o

C]

0.1

1

10

100

1000

0.01

0.1

1

10

100

1000

20

μs

100

μs

1ms

10ms

VDS, Drain-Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25

o

C

2. TJ = 150

o

C

3. Single Pulse

DC

10

-5

10

-4

10

-3

10

-2

10

-1

110

10

2

10

3

0.01

0.1

1

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZθJC(t) = 0.4

o

C/W Max.

2. Duty Factor, D= t1/t2

3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Rectangular Pulse Duration [sec]

t1

PDM

t2

Аналогичный номер детали - FCB36N60N

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FCB36N60N	239Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
Inchange Semiconductor ...	FCB36N60N	333Kb / 2P	isc N-Channel MOSFET Transistor

More results

Аналогичное описание - FCB36N60N

производитель	номер детали	датащи	подробное описание детали
Fairchild Semiconductor	FCB36N60N	239Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 36 A, 90 m廓
	FCPF7N60NT	388Kb / 10P	N-Channel SupreMOS짰 MOSFET 600 V, 6.8 A, 520 m廓
	FCI25N60N	364Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 25 A, 125 m廓
Diodes Incorporated	FCP25N60N	460Kb / 8P	N-Channel SupreMOS짰 MOSFET 600 V, 25 A, 125 m廓
Renesas Technology Corp	N0439N	221Kb / 7P	N-channel MOSFET 40 V, 90 A, 3.3 m廓
Fairchild Semiconductor	FDD86102	396Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 36 A, 24 m廓
	FCD380N60E	205Kb / 9P	N-Channel SuperFET짰 II MOSFET 600 V, 10.2 A, 380 m廓
	FDMC86248	262Kb / 7P	N-Channel Power Trench짰 MOSFET 150 V, 13 A, 90 m廓
Kersemi Electronic Co.,...	KSMU5N60C	3Mb / 8P	N-Channel MOSFET 600 V, 2.8 A, 2.5 廓
Kersemi Electronic Co.,...	KSMD5N60C	3Mb / 8P	N-Channel MOSFET 600 V, 2.8 A, 2.5 廓

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