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MOS INTEGRATED CIRCUIT

MC-4R128FKE8S-840

Direct Rambus DRAM SO-RIMM

128M-BYTE (64M-WORD x 18-BIT)

DATA SHEET

Document No. E0258N20 (Ver. 2.0)

Date Published June 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Description

The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable

for use in a broad range of applications including computer memory, mobile personal computers, networking

systems, and other applications where high bandwidth and low latency are required.

MC-4R128FKE8S modules consists of four 288M Direct Rambus DRAM (Direct RDRAM) devices (

µPD488588).

These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling

Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design

technologies.

Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per 16 bytes).

The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,

randomly addressed memory transactions. The separate control and data buses with independent row and column

control yield high bus efficiency. The Direct RDRAM's multi-bank architecture supports up to four simultaneous

transactions per device.

Features

• 160 edge connector pads with 0.65mm pad spacing

• 128 MB Direct RDRAM storage

• Gold plated contacts

• RDRAMs use Chip Scale Package (CSP)

• Serial Presence Detect support

• Operates from a 2.5 V supply

• Powerdown self refresh modes

• Separate Row and Column buses for higher efficiency