IRF3707L datasheet(1/11 Pages) IRF

номер детали	IRF3707L

подробное описание детали	High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use

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производитель	IRF [International Rectifier]

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IRF3707

IRF3707S

SMPS MOSFET

HEXFET® Power MOSFET

Benefits

l Ultra-Low Gate Impedance

l Very Low RDS(on)

l Fully Characterized Avalanche Voltage

and Current

VDSS

RDS(on) max

ID

30V

12.5m

Ω

62A

Notes

through are on page 10

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-to-Source Voltage

± 20

V

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

62

ID @ TC = 70°C

Continuous Drain Current, VGS @ 10V

52

A

IDM

Pulsed Drain Current

248

PD @TC = 25°C

Maximum Power Dissipation

87

W

PD @TC = 70°C

Maximum Power Dissipation

61

W

Linear Derating Factor

0.59

mW/°C

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 175

°C

* When mounted on 1" square PCB (FR-4 or G-10 Material) .

For recommended footprint and soldering techniques refer to application note #AN-994

D2Pak

IRF3707S

TO-220AB

IRF3707

TO-262

IRF3707L

Thermal Resistance

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.73

RθCS

Case-to-Sink, Flat, Greased Surface

0.50

–––

°C/W

RθJA

Junction-to-Ambient

–––

62

RθJA

Junction-to-Ambient (PCB mount)*

–––

40

IRF3707L

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

Applications

l High Frequency Buck Converters for

Computer Processor Power

PD - 93937B

Аналогичный номер детали - IRF3707L

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF3707L	143Kb / 10P	Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A)
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Аналогичное описание - IRF3707L

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Аналогичный номер детали - IRF3707L

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