FEATURES

applications.

DC current gain-h

= 25 (Min) @ l = 5 Adc

FE

C

High safe operation area (100% tested) 250W @ 50V

DESCRIPTION

SEMICONDUCTOR

RoHS

RoHS

Complementary Silicon power transistors

Nell High Power Products

MJ15004(PNP)

(20A / 140V / 250W)

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

UNIT

PARAMETER

ºC

5

20

Collector current - continuous

Base current - continuous

Total power dissipation

Junction temperature

Designed for general-purpose switching and amplifier

140

140

250

5

VALUE

-65 to 200

200

Collector to base voltage (I = 0)

E

Emitter to base voltage

SYMBOL

T = 25°C

C

Storage temperature

W

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THERMAL CHARACTERISTICS (T = 25°C unless otherwise specified)

C

UNIT

PARAMETER

0.7

VALUE

Thermal resistance, junction to case

SYMBOL

ºC/W

MJ15003(NPN)

For low distortion complementary designs

The MJ15003 is a silicon epitaxial-base planar

NPN transistor mounted in JEDEC TO-3 metal

case.

lt is designed for high power audio, disk head

positioners and other linear applications.

The complementary PNP type is MJ15004.

Collector to emitter voltage (I = 0)

B

All dimensions in millimeters

INTERNAL SCHEMATIC DIAGRAM

26.00 Max.

10.90

2- 4.0 Thru.

Φ

13.10 Max.

8.60

1.60

C

B

E

(TAB)

(2)

(1)

C

B

(TAB)

(1)

E

(2)

1

2

TO-3

TAB

*For PNP types voltage and current values are negative.

Derate above 25ºC

W/ºC

1.43

Emitter current - continuous

25

Maximum lead temperature for soldering purposes :

1/16” from case for ≤ 10 seconds

265

ºC

1

2

MJ15004(PNP)

MJ15003(NPN)