©

1996

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ463A

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

Document No. D11198EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

DESCRIPTION

The 2SJ463A is a switching device which can be driven directly

by a 2.5 V power source.

The 2SJ463A has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital circuits.

FEATURES

•

Can be driven by a 2.5 V power source.

•

Low Gate Cut-off Voltage.

Drain to Source Voltage

–30

V

Gate to Source Voltage

+20

V

Drain Current (DC)

+0.1

A

Drain Current (pulse)

A

Total Power Dissipation

150

mW

Channel Temperature

150

°C

Storage Temperature

–55 to +150

°C

Note

PW

≤ 10

µs, Duty Cycle ≤ 1 %

Package Drawings (unit: mm)

Equivalent Circuit

2.1 ±0.1

2

1

3

1.25 ±0.1

Marking

Internal Diode

Source

Drain

Gate

Gate Protect

Diode

Electrode

Connection

1. Source

2. Gate

3. Drain

Marking : H21

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.