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STFW69N65M5 датащи(PDF) 1 Page - STMicroelectronics |
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STFW69N65M5 датащи(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is information on a product in full production. September 2012 Doc ID 022906 Rev 2 1/16 16 STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages Datasheet −production data Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Order codes VDSS @ TJmax RDS(on) max ID STFW69N65M5 710 V < 0.045 Ω 58 A STW69N65M5 TO-247 TO-3PF 1 2 3 1 1 1 1 2 3 Table 1. Device summary Order codes Marking Package Packaging STFW69N65M5 69N65M5 TO-3PF Tube STW69N65M5 TO-247 www.st.com |
Аналогичный номер детали - STFW69N65M5 |
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Аналогичное описание - STFW69N65M5 |
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