STP120N4F6 datasheet(4/13 Pages) STMICROELECTRONICS

номер детали	STP120N4F6

подробное описание детали	N-channel 40 V, 3.8 m廓 , 80 A, TO-220 STripFET??VI DeepGATE??Power MOSFET

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Electrical characteristics

STP120N4F6

4/13

Doc ID 018846 Rev 1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

40

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20 V

VDS = 20 V,Tc = 125 °C

1

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

3.8

4.3

m

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0 V

-

3850

650

350

-

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 20 V, ID = 80 A

VGS = 10 V

(see Figure 14)

-

65

20

16

-

nC

RG

Intrinsic gate resistance

f = 1 MHz open drain

-

1.5

-

Ω

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Аналогичный номер детали - STP120N4F6

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