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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPD12S015A датащи(PDF) 8 Page - Texas Instruments |
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TPD12S015A датащи(HTML) 8 Page - Texas Instruments |
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8 / 35 page  TPD12S015A SLLSE74C – JUNE 2011 – REVISED MARCH 2013 www.ti.com ESD RATINGS PARAMETER PINS TYP UNIT Human Body Model JESD22 A114-B SCL_A, SDA_A, CEC_A, CT_CP_HPD, LS_OE, VCCA 2.5 kV Charged Device Model JESD22 C101 ALL 1000 V IEC 61000-4-2 Contact Discharge D0+, D0-, D1+, D1-, D2+, D2-, CLK+, CLK-, SCL_B, ±8 kV SDA_B, CEC_B, HPD_B, 5VOUT, FB Human Body Model D0+, D0-, D1+, D1-, D2+, D2-, CLK+, CLK-, SCL_B, ±15 kV SDA_B, CEC_B, HPD_B, 5VOUT, FB ELECTRICAL CHARACTERISTICS ICC PARAMETER PIN TEST CONDITIONS MIN TYP MAX UNIT ICCA Standby VCCA I/O = High 2 µA Active 15 ICCB Standby VBAT CT_CP_HPD=L, LS_OE=L, HPD_B=L 2 µA DC/DC and HPD active CT_CP_HPD=H, LS_OE=L, HPD_B=L 30 50 DC/DC, HPD, DDC, CEC active CT_CP_HPD=H LS_OE=H, HPD_B=L, 225 300 I/O =H High-Speed ESD Lines: Dx, CLK PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IOFF Current from IO port to supply VCC = 0 V, VIO = 3.3 V 0.01 0.5 µA pins VDL Diode forward voltage ID = 8 mA, Lower clamp diode 0.85 1.0 V RDYN Dynamic resistance I = 1 A D, CLK 1 Ω CIO IO capacitance VCC = 5 V D, CLK 1.3 pF VIO = 2.5 V VBR Break-down voltage IIO = 1mA 9 12 V DC-DC Converter PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VBAT Input voltage range 2.3 5.5 V 5VOUT Total DC output voltage Includes voltage references, DC load / line 4.9 5 5.13 V regulations, process and temperature TOVA Total output voltage accuracy Includes voltage references, DC load / line 4.8 5 5.3 V regulations, transient load / line regulations, ripple, process and temperature VO_Ripple Output voltage ripple, loaded IO = 65 mA 20 mV (p- p) F_clk Internal operating frequency VBAT = 2.3 V to 5.5 V 3.5 MHz tstart Startup time From CT_CP_HPD input to 5 V power output 300 µs 90% point IO Output current VBAT = 2.3 V to 5.5 V 55 mA Reverse leakage current VO CT_CP_HPD= L, VO = 5.5 V 2.5 µA Leakage current from battery to CT_CP_HPD= L 5 µA VO VBATUVT Under voltage lockout threshold Falling 2 V Rising 2.1 V VBATOVT Over voltage lockout threshold Falling 5.9 V Rising 6.0 V Line transient response VBAT = 3.6 V, a pulse of 217Hz 600 mVp-p ±25 ±50 mVpk square wave, IO = 20/65 mA 8 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: TPD12S015A |
Аналогичный номер детали - TPD12S015A_14 |
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Аналогичное описание - TPD12S015A_14 |
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