VN0106 datasheet(2/5 Pages) SUTEX

номер детали	VN0106

подробное описание детали	N-Channel Enhancement-Mode Vertical DMOS FET

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производитель	SUTEX [Supertex, Inc]

домашняя страница	http://www.supertex.com

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VN0106

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

Electrical Characteristics (T

A = 25

O

C unless otherwise specified)

Sym

Parameter

Min

Typ

Max

Units Conditions

Notes:

† I

D (continuous) is limited by max rated Tj .

Thermal Characteristics

Package

I

D

(continuous)†

(mA)

I

D

(pulsed)

(A)

Power Dissipation

@T

C = 25

O

C

(W)

θ

jc

(OC/W)

θ

ja

(OC/W)

I

DR

†

(mA)

I

DRM

(A)

TO-92

350

2.0

1.0

125

170

350

2.0

Switching Waveforms and Test Circuit

90%

10%

90%

10%

Pulse

Generator

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

r

INPUT

OUTPUT

10V

VDD

R

GEN

0V

t

f

BV

DSS

Drain-to-source breakdown voltage

60

-

V

GS = 0V, ID = 1.0mA

V

GS(th)

Gate threshold voltage

0.8

-

2.4

V

GS = VDS, ID= 1.0mA

ΔV

GS(th)

Change in V

GS(th) with temperature

-

-3.8

-5.5 mV/OC V

GS = VDS, ID= 1.0mA

I

GSS

Gate body leakage

-

100

nA

V

GS = ± 20V, VDS = 0V

I

DSS

Zero gate voltage drain current

-

1.0

µA

V

GS = 0V, VDS = Max Rating

-

100

V

DS = 0.8 Max Rating,

V

GS = 0V, TA = 125°C

I

D(ON)

On-state drain current

0.5

1.0

-

A

V

GS = 5.0V, VDS = 25V

2.0

2.5

-

V

GS = 10V, VDS = 25V

R

DS(ON)

Static drain-to-source on-state resistance

-

3.0

5.0

Ω

V

GS = 5.0V, ID = 250mA

-

2.5

3.0

V

GS = 10V, ID = 1.0A

ΔR

DS(ON)

Change in R

DS(ON) with temperature

-

0.70

1.0

%/OC V

GS = 10V, ID = 1.0A

G

FS

Forward transductance

300

450

-

mmho V

DS = 25V, ID = 500mA

C

ISS

Input capacitance

-

55

65

pF

V

GS = 0V,

V

DS = 25V,

f = 1.0MHz

C

OSS

Common source output capacitance

-

20

25

C

RSS

Reverse transfer capacitance

-

5.0

8.0

t

d(ON)

Turn-on delay time

-

3.0

5.0

ns

V

DD = 25V,

I

D = 1.0A,

R

GEN = 25Ω

t

r

Rise time

-

5.0

8.0

t

d(OFF)

Turn-off delay time

-

6.0

9.0

t

f

Fall time

-

5.0

8.0

V

SD

Diode forward voltage drop

-

1.2

1.8

V

GS = 0V, ISD = 1.0A

t

rr

Reverse recovery time

-

400

-

ns

V

GS = 0V, ISD = 1.0A

Notes:

1.

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.

All A.C. parameters sample tested.

Аналогичный номер детали - VN0106

производитель	номер детали	датащи	подробное описание детали
Supertex, Inc	VN0106	476Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FET
New Jersey Semi-Conduct...	VN0106N2	68Kb / 1P	N-Channel Enhancement-Mode
Supertex, Inc	VN0106N3	476Kb / 4P	N-Channel Enhancement-Mode Vertical DMOS FET
New Jersey Semi-Conduct...	VN0106N3	68Kb / 1P	N-Channel Enhancement-Mode
New Jersey Semi-Conduct...	VN0106N5	68Kb / 1P	N-Channel Enhancement-Mode

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Аналогичное описание - VN0106

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Аналогичный номер детали - VN0106

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