поискавой системы для электроныых деталей |
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2SK3299-S датащи(PDF) 7 Page - NEC |
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2SK3299-S датащи(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14060EJ1V0DS00 7 2SK3299 PACKAGE DRAWINGS (Unit : mm) 1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut) 3)TO-263 (MP-25ZJ) EQUIVALENT CIRCUIT Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 (10) 4 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 (10) 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R) (0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2 Body Diode Source (S) Drain (D) Gate (G) |
Аналогичный номер детали - 2SK3299-S |
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Аналогичное описание - 2SK3299-S |
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