BF423 datasheet(2/2 Pages) GE

номер детали	BF423

подробное описание детали	Small Signal Transistors (PNP)

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производитель	GE [General Semiconductor]

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ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Collector-Base Breakdown Voltage

BF421

at –IC = 100 µA, IE = 0

BF423

–V(BR)CBO

300

250

–

V

Collector-Emitter Breakdown Voltage

BF423

at –IC = 10 mA, IB = 0

–V(BR)CEO

250

–

V

Collector-Emitter Breakdown Voltage

BF421

at RBE = 2.7 kΩ, at –IC = 10 mA

–V(BR)CER

300

––V

Emitter-Base Breakdown Voltage

at –IE = 100 µA, IC = 0

–V(BR)EBO

5––V

Collector-Base Cutoff Current

at –VCB = 200 V, IE = 0

–ICBO

––10

nA

Collector-Emitter Cutoff Current

at RBE = 2.7 kΩ, –VCE = 250 V

at RBE = 2.7 kΩ, –VCE = 200 V, Tj = 150 °C

–ICER

50

10

nA

µA

Collector Saturation Voltage

at –IC = 30 mA, –IB = 5 mA

–VCEsat

––0.8

V

DC Current Gain

at –VCE = 20 V, –IC = 25 mA

hFE

50

–––

Gain-Bandwidth Product

at –VCE = 10 V, –IC = 10 mA

fT

60

––MHz

Feedback Capacitance

at –VCE = 30 V, –IC = 0, f = 1 MHz

Cre

––1.6

pF

Thermal Resistance Junction to Ambient Air

RthJA

–

1501)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

BF421, BF423

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