SiHP17N60D-GE3 datasheet(1/9 Pages) VISHAY

номер детали	SiHP17N60D-GE3

подробное описание детали	D Series Power MOSFET

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SiHP17N60D

www.vishay.com

Vishay Siliconix

S12-0813-Rev. B, 30-Apr-12

1

Document Number: 91464

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

D Series Power MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (Ciss)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): Ron x Qg

- Fast Switching

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

•Lighting

• Industrial

- Welding

- Induction Heating

- Motor Drives

- Battery Chargers

•SMPS

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 12 A.

c. 1.6 mm from case.

d. ISD  ID, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) max. at 25 °C ()VGS = 10 V

0.340

Qg (Max.) (nC)

90

Qgs (nC)

14

Qgd (nC)

22

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

SiHP17N60D-E3

Lead (Pb)-free and Halogen-free

SiHP17N60D-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

17

A

TC = 100 °C

10.7

Pulsed Drain Currenta

IDM

48

Linear Derating Factor

2.22

W/°C

Single Pulse Avalanche Energyb

EAS

165.6

mJ

Maximum Power Dissipation

PD

277.8

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

24

V/ns

Reverse Diode dV/dtd

0.2

Soldering Recommendations (Peak Temperature)c

for 10 s

300

°C

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