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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FQD13N06 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FQD13N06 датащи(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  Package Marking and Ordering Information ©2000 Fairchild Semiconductor Corporation FQD13N06 Rev. C1 www.fairchildsemi.com 2 Part Number Top Mark Package Reel Size Tape Width Quantity FQD13N06 FQD13N06TM DPAK 330 mm 16 mm 2500 units Packing Method Tape and Reel Electrical Characteristics T C = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.0 A -- 0.11 0.14 Ω gFS Forward Transconductance VDS = 25 V, ID = 5.0 A -- 4.9 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 240 310 pF Coss Output Capacitance -- 90 120 pF Crss Reverse Transfer Capacitance -- 15 20 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 6.5 A, RG = 25 Ω -- 5 20 ns tr Turn-On Rise Time -- 25 60 ns td(off) Turn-Off Delay Time -- 8 25 ns tf Turn-Off Fall Time -- 15 40 ns Qg Total Gate Charge VDS = 48 V, ID = 13 A, VGS = 10 V -- 5.8 7.5 nC Qgs Gate-Source Charge -- 2.0 -- nC Qgd Gate-Drain Charge -- 2.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 10 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 40 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 10 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 13 A, dIF / dt = 100 A/µs -- 39 -- ns Qrr Reverse Recovery Charge -- 40 -- nC (Note 4) (Note 4) Notes: Repetitive rating : pulse-width limited by maximum junction temperature. L = 990 µH, IAS = 10 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 13 A, di/dt ≤ 300 A/us, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. 1. 2. |
Аналогичный номер детали - FQD13N06 |
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Аналогичное описание - FQD13N06 |
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