STB21NK50Z datasheet(3/13 Pages) STMICROELECTRONICS

номер детали	STB21NK50Z

подробное описание детали	N-channel 500 V, 0.23 廓, 17 A, D2PAK Zener-protected superMESH??Power MOSFET

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STB21NK50Z

Electrical ratings

3/13

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

500

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

17

A

ID

Drain current (continuous) at TC=100 °C

10.71

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

68

A

PTOT

Total dissipation at TC = 25 °C

190

W

Derating Factor

1.51

W/°C

Vesd(G-S)

G-S ESD (HBM C=100 pF, R=1.5 k

Ω)

6000

V

dv/dt(2)

2.

ISD ≤ 17 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, TJ ≤ TJMAX

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

-55 to 150

°C

TJ

Max operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.66

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

17

A

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAR, VDD=50 V)

850

mJ

Аналогичный номер детали - STB21NK50Z

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STB21N65M5	1Mb / 22P	N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D짼PAK, TO-220FP, TO-220, I짼PAK, TO-247 May 2011 Rev 4
Inchange Semiconductor ...	STB21N65M5	313Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STB21N90K5	998Kb / 22P	N-channel 900 V, 0.25 廓 typ., 18.5 A Zener-protected SuperMESH??5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages
	STB21NM50N	633Kb / 16P	N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
	STB21NM50N	463Kb / 18P	N-channel 500V - 0.15廓 - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh??Power MOSFET

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Аналогичное описание - STB21NK50Z

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STFI20NK50Z	531Kb / 13P	N-channel 500 V, 0.23 廓, 17 A Zener-protected SuperMESH?? Power MOSFET in I짼PAKFP package March 2012 Rev 3
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	STP20NK50Z	380Kb / 13P	N-CHANNEL 500V -0.23廓- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH??MOSFET
	STB6NK60Z_0711	444Kb / 17P	N-channel 600 V - 1 廓 - 6 A - TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH??Power MOSFET
	STP7NK80Z	943Kb / 17P	N-channel 800 V, 1.5 廓, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH??Power MOSFET
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	STD3PK50Z	740Kb / 15P	P-channel 500 V, 3 廓 typ., 2.8 A Zener-protected SuperMESH??Power MOSFET in a DPAK package
	STB11NK50Z	415Kb / 16P	N-channel 500 V, 0.48 廓 , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
	STB9NK90Z	997Kb / 17P	N-channel 900 V, 1.1 廓, 8 A, TO-220, TO-220FP, D2PAK, TO-247 Zener-protected SuperMESH??Power MOSFET
	STB13NK60ZT4	497Kb / 18P	N-channel 600 V, 0.48 廓, 13 A, TO-220, TO-220FP, D2PAK TO-247 Zener-protected SuperMESH??Power MOSFET

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