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STB21NK50Z датащи(PDF) 4 Page - STMicroelectronics |
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STB21NK50Z датащи(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STB21NK50Z 4/13 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 500 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 33.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 8.5 A 0.23 0.27 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f=1 MHz, VGS=0 2600 328 72 pF pF pF Coss eq (1) . 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS=0, VDS =0 to 400 V 187 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=400 V, ID = 17 A VGS =10 V (see Figure 15) 85 15.5 42 119 nC nC nC |
Аналогичный номер детали - STB21NK50Z |
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Аналогичное описание - STB21NK50Z |
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