SI6913DQ datasheet(1/11 Pages) VISHAY

номер детали	SI6913DQ

подробное описание детали	Dual P-Channel 12 V (D-S) MOSFET

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Vishay Siliconix

Si6913DQ

Document Number: 72368

S12-1359-Rev. C, 11-Jun-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Dual P-Channel 12 V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFETs

•

Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

•

Load Switch

•

Battery Switch

Notes:

a. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A)

- 12

0.021 at VGS = - 4.5 V

- 5.8

0.028 at VGS = - 2.5 V

- 5.0

0.037 at VGS = - 1.8 V

- 4.4

Ordering Information:

Si6913DQ-T1-E3 (Lead (Pb)-free)

Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

S1

G1

1

2

3

4

8

7

6

5

D2

S2

G2

TSSOP-8

Top View

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 5.8

- 4.9

A

TA = 70 °C

- 4.6

- 3.9

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 30

Continuous Source Current (Diode Conduction)a

IS

- 1

- 0.7

Maximum Power Dissipationa

TA = 25 °C

PD

1.14

0.83

W

TA = 70 °C

0.73

0.53

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

 10 s

RthJA

86

110

°C/W

Steady State

124

150

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

52

65

Аналогичный номер детали - SI6913DQ

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI6913DQ	79Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI6913DQ	201Kb / 4P	Dual P-Channel 12-V (D-S) MOSFET 23-May-04
	SI6913DQ	225Kb / 11P	Dual P-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SI6913DQ-T1	79Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 15-Sep-03
VBsemi Electronics Co.,...	SI6913DQ-T1-GE3	896Kb / 6P	Dual P-Channel 30-V (D-S) MOSFET

More results

Аналогичное описание - SI6913DQ

производитель	номер детали	датащи	подробное описание детали
Analog Power	AM6923P	186Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI4933DY	44Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. B, 25-Nov-02
	SI1917EDH	119Kb / 6P	Dual P-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SI4933DY	110Kb / 6P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022
	SI7909DN	91Kb / 6P	Dual P-Channel 12-V (D-S) MOSFET 01-Jan-2022
	SIA975DJ	356Kb / 9P	Dual P-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SI7909DN	185Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. C, 27-Jun-05
	SI6913DQ	79Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI5943DU	272Kb / 3P	Dual P-Channel 12-V (D-S) MOSFET Rev. A, 24-Jul-06
	SI3973DV	55Kb / 5P	Dual P-Channel 12-V (D-S) MOSFET Rev. D, 29-Mar-04

More results

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