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SI6913DQ датащи(PDF) 2 Page - Vishay Siliconix

номер детали SI6913DQ
подробное описание детали  Dual P-Channel 12 V (D-S) MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Vishay Siliconix
Si6913DQ
Document Number: 72368
S12-1359-Rev. C, 11-Jun-12
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 400 µA
- 0.4
- 0.9
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V
- 1
µA
VDS = - 12 V, VGS = 0 V, TJ = 70 °C
- 25
On-State Drain Currenta
ID(on)
VDS  - 5 V, VGS = - 4.5 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS  - 4.5 V, ID = - 5.8 A
0.016
0.021
VGS = - 2.5 V, ID = - 5 A
0.021
0.028
VGS = - 1.8 V, ID = - 4.4 A
0.029
0.037
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 5.8 A
25
S
Diode Forward Voltagea
VSD
IS = - 1 A, VGS = 0 V
- 0.61
- 1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.8 A
18.5
28
nC
Gate-Source Charge
Qgs
2.7
Gate-Drain Charge
Qgd
5
Gate Resistance
Rg
f = 1 MHz
4.6
Turn-On Delay Time
td(on)
VDD = - 6 V, RL = 6 
ID  - 1 A, VGEN = - 4.5 V, RG = 6 
45
70
ns
Rise Time
tr
80
120
Turn-Off Delay Time
td(off)
130
200
Fall Time
tf
80
120
Source-Drain Reverse Recovery Time
trr
IF = - 1 A, dI/dt = 100 A/µs
65
100
Output Characteristics
0
6
12
18
24
30
01234
5
VGS = 5 thru 2.5 V
VDS - Drain-to-Source Voltage (V)
2 V
1.5 V
Transfer Characteristics
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
125 °C
25 °C
VGS - Gate-to-Source Voltage (V)


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