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SI6913DQ датащи(PDF) 2 Page - Vishay Siliconix |
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SI6913DQ датащи(HTML) 2 Page - Vishay Siliconix |
2 / 11 page Vishay Siliconix Si6913DQ Document Number: 72368 S12-1359-Rev. C, 11-Jun-12 www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 400 µA - 0.4 - 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µA VDS = - 12 V, VGS = 0 V, TJ = 70 °C - 25 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS - 4.5 V, ID = - 5.8 A 0.016 0.021 VGS = - 2.5 V, ID = - 5 A 0.021 0.028 VGS = - 1.8 V, ID = - 4.4 A 0.029 0.037 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.8 A 25 S Diode Forward Voltagea VSD IS = - 1 A, VGS = 0 V - 0.61 - 1.1 V Dynamicb Total Gate Charge Qg VDS = - 6 V, VGS = - 4.5 V, ID = - 5.8 A 18.5 28 nC Gate-Source Charge Qgs 2.7 Gate-Drain Charge Qgd 5 Gate Resistance Rg f = 1 MHz 4.6 Turn-On Delay Time td(on) VDD = - 6 V, RL = 6 ID - 1 A, VGEN = - 4.5 V, RG = 6 45 70 ns Rise Time tr 80 120 Turn-Off Delay Time td(off) 130 200 Fall Time tf 80 120 Source-Drain Reverse Recovery Time trr IF = - 1 A, dI/dt = 100 A/µs 65 100 Output Characteristics 0 6 12 18 24 30 01234 5 VGS = 5 thru 2.5 V VDS - Drain-to-Source Voltage (V) 2 V 1.5 V Transfer Characteristics 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) |
Аналогичный номер детали - SI6913DQ |
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Аналогичное описание - SI6913DQ |
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