2SJ506L datasheet(1/10 Pages) HITACHI

номер детали	2SJ506L

подробное описание детали	Silicon P Channel MOS FET High Speed Power Switching

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производитель	HITACHI [Hitachi Semiconductor]

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2SJ506(L), 2SJ506(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-548

Target Specification 1st. Edition

Features

• Low on-resistance

R

DS(on) = 0.065 Ω typ. (at VGS = –10V, ID = –5A)

• Low drive current

• High speed switching

• 4V gate drive devices.

Outline

1 2

3

4

1 2

3

1. Gate

2. Drain

3. Source

4. Drain

DPAK–2

D

G

S

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