MC-4516CD64PS-A10B datasheet(6/6 Pages) NEC

номер детали	MC-4516CD64PS-A10B

подробное описание детали	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

Download	6 Pages

Scroll/Zoom	100%

производитель	NEC [NEC]

домашняя страница	http://www.nec.com/

Logo

6 / 6 page

Data Sheet M13612EJ5V0DS00

6

MC-4516CD64ES, 4516CD64PS

DC Characteristics (Recommended Operating Conditions unless otherwise noted)

Parameter

Symbol

Test condition

MIN.

MAX.

Unit

Notes

Operating current

ICC1

Burst length = 1, tRC

≥ tRC(MIN.)

/CAS latency = 2

560

mA

1

/CAS latency = 3

560

Precharge standby current in

ICC2P

CKE

≤ VIL(MAX.), tCK = 15 ns

8

mA

power down mode

ICC2PS

CKE

≤ VIL(MAX.), tCK = ∞

8

Precharge standby current in

non power down mode

ICC2NCKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

160

mA

ICC2NS

CKE

≥ VIH(MIN.), tCK = ∞, Input signals are stable.

64

Active standby current in

ICC3P

CKE

≤ VIL(MAX.), tCK = 15 ns

40

mA

power down mode

ICC3PS

CKE

≤ VIL(MAX.), tCK = ∞

32

Active standby current in

non power down mode

ICC3NCKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

240

mA

ICC3NS

CKE

≥ VIH(MIN.), tCK = ∞, Input signals are stable.

160

Operating current

ICC4

tCK

≥ tCK(MIN.), IO = 0 mA

/CAS latency = 2

520

mA

2

(Burst mode)

/CAS latency = 3

680

CBR (Auto) refresh current

ICC5

tRC

≥ tRC(MIN.)

/CAS latency = 2

1,000

mA

3

/CAS latency = 3

1,000

Self refresh current

ICC6

CKE

≤ 0.2 V16

mA

Input leakage current

II(L)

VI = 0 to 3.6 V, All other pins not under test = 0 V

– 8+8

µA

Output leakage current

IO(L)

DOUT is disabled, VO = 0 to 3.6 V–3

+3

µA

High level output voltage

VOH

IO = – 4.0 mA

2.4

V

Low level output voltage

VOL

IO = + 4.0 mA

0.4

V

Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.).

2.ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.).

3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.).

5

Аналогичный номер детали - MC-4516CD64PS-A10B

производитель	номер детали	датащи	подробное описание детали
Elpida Memory	MC-4516CD64PS-A10B	143Kb / 16P	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

More results

Аналогичное описание - MC-4516CD64PS-A10B

производитель	номер детали	датащи	подробное описание детали
NEC	MC-4516CB64ES	129Kb / 6P	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-4516CD64ES	143Kb / 16P	16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Elpida Memory	MC-45D16CD641KS	177Kb / 14P	16 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-4516CD641ES	150Kb / 6P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
NEC	MC-458CB64ESB	126Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-4516CD641ES	154Kb / 16P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-458CB641ES	151Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-458CB64ESB	141Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-4516CD642XS	136Kb / 14P	16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CB641ES	137Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

More results

MC-4516CD64PS-A10B датащи(PDF) 6 Page - NEC

MC-4516CD64PS-A10B датащи(HTML) 6 Page - NEC

Аналогичный номер детали - MC-4516CD64PS-A10B

Аналогичное описание - MC-4516CD64PS-A10B

Html Pages

1 2 3 4 5 6

датащи скачать

ссылки URL