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SS9012GBU датащи(PDF) 1 Page - Fairchild Semiconductor |
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SS9012GBU датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE =0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5 V ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 nA IEBO Emitter Cut-off Current VEB = -3V, IC =0 -100 nA hFE1 hFE2 DC Current Gain VCE = -1V, IC = -50mA VCE = -1V, IC = -500mA 64 40 120 90 202 VCE (sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.18 -0.6 V VBE (sat) Base-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.95 -1.2 V VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 V Classification D E F G H hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202 1. Emitter 2. Base 3. Collector SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity. TO-92 1 |
Аналогичный номер детали - SS9012GBU |
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Аналогичное описание - SS9012GBU |
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