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NE32484A-T1A датащи(PDF) 8 Page - NEC

номер детали NE32484A-T1A
подробное описание детали  C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
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производитель  NEC [NEC]
домашняя страница  http://www.nec.com/
Logo NEC - NEC

NE32484A-T1A датащи(HTML) 8 Page - NEC

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NE32484A
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under
different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535EJ7V0IF00).
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 ˚C or below,
IR30-00
Reflow time: 30 seconds or below (210 ˚C or higher),
Number of reflow process: 1, Exposure limitNote: None
Partial heating method
Terminal temperature: 230 ˚C or below,
Flow time: 10 seconds or below,
Exposure limitNote: None
Note Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 ˚C and relative humidity at 65 % or less.
Caution Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.


Аналогичный номер детали - NE32484A-T1A

производительномер деталидатащиподробное описание детали
logo
Renesas Technology Corp
NE32484A-T1A RENESAS-NE32484A-T1A Datasheet
195Kb / 14P
   HETERO JUNCTION FIELD EFFECT TRANSISTOR
1991
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Аналогичное описание - NE32484A-T1A

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