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IRFB7734PBF датащи(PDF) 3 Page - International Rectifier |
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IRFB7734PBF датащи(HTML) 3 Page - International Rectifier |
3 / 13 page IRFB/S/SL7734PbF 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 250 ––– ––– S VDS = 10V, ID =100A Qg Total Gate Charge ––– 180 270 ID = 100A Qgs Gate-to-Source Charge ––– 45 ––– VDS = 38V Qgd Gate-to-Drain Charge ––– 55 ––– VGS = 10V Qsync Total Gate Charge Sync. (Qg – Qgd) ––– 125 ––– td(on) Turn-On Delay Time ––– 20 ––– ns VDD = 38V tr Rise Time ––– 123 ––– ID = 100A td(off) Turn-Off Delay Time ––– 124 ––– RG= 2.7 tf Fall Time ––– 100 ––– VGS = 10V Ciss Input Capacitance ––– 10150 ––– pF VGS = 0V Coss Output Capacitance ––– 816 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 500 ––– ƒ = 1.0MHz Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 707 ––– VGS = 0V, VDS = 0V to 60V Coss eff.(TR) Output Capacitance (Time Related) ––– 916 ––– VGS = 0V, VDS = 0V to 60V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 183 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 650 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 5.1 ––– V/ns TJ = 175°C,IS =100A,VDS = 64V trr Reverse Recovery Time ––– 47 ––– ns TJ = 25°C VDD = 64V ––– 51 ––– TJ = 125°C IF = 100A, Qrr Reverse Recovery Charge ––– 76 ––– nC TJ = 25°C di/dt = 100A/µs ––– 96 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 2.8 ––– A TJ = 25°C nC D S G |
Аналогичный номер детали - IRFB7734PBF |
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Аналогичное описание - IRFB7734PBF |
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