поискавой системы для электроныых деталей |
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BF1207_2015 датащи(PDF) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1207_2015 датащи(HTML) 9 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
9 / 22 page 9397 750 14955 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 28 July 2005 9 of 22 Philips Semiconductors BF1207 Dual N-channel dual gate MOSFET VDS(A) =VDS(B) =5V; VG1-S(B) =0V; fw = 50 MHz; funw = 60 MHz; Tamb =25 °C; see Figure 29. VDS(A) =VDS(B) =5V; VG1-S(B) = 0 V; f = 50 MHz; see Figure 29. Fig 9. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values Fig 10. Amplifier A: gain reduction as a function of AGC voltage; typical values VDS(A) =VDS(B) =5V; VG1-S(B) = 0 V; f = 50 MHz; Tamb =25 °C; see Figure 29. Fig 11. Amplifier A: drain current as a function of gain reduction; typical values gain reduction (dB) 050 40 20 30 10 001aac887 100 90 110 120 Vunw (dB µV) 80 VAGC (V) 04 3 12 001aac888 30 20 40 10 0 gain reduction (dB) 50 gain reduction (dB) 050 40 20 30 10 001aac889 ID (mA) 8 24 16 32 0 |
Аналогичный номер детали - BF1207_2015 |
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Аналогичное описание - BF1207_2015 |
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