поискавой системы для электроныых деталей |
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FDD9409_F085 датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDD9409_F085 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDD9409_F085 Rev. C4 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V IDSS Drain-to-Source Leakage Current VDS=40V, TJ = 25oC - - 1 μA VGS = 0V TJ = 175oC(Note 4) - - 1 mA IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate-to-Source Threshold Voltage VGS = VDS, ID = 250μA 2.0 3.2 4.0 V RDS(on) Drain-to-Source On Resistance ID = 80A, VGS= 10V TJ = 25oC - 2.3 3.2 m Ω TJ = 175oC(Note 4) - 4.1 5.7 m Ω Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 3130 - pF Coss Output Capacitance - 756 - pF Crss Reverse Transfer Capacitance - 48 - pF Rg Gate Resistance f = 1MHz - 2 - Ω Qg(ToT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 20V ID = 80A -42 46 nC Qg(th) Threshold Gate Charge VGS = 0 to 2V - 6 7 nC Qgs Gate-to-Source Gate Charge -16 - nC Qgd Gate-to-Drain “Miller“ Charge - 7.7 - nC Switching Characteristics Drain-Source Diode Characteristics Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. ton Turn-On Time VDD = 20V, ID = 80A, VGS = 10V, RGEN = 6Ω - - 72 ns td(on) Turn-On Delay - 23 - ns tr Rise Time - 22 - ns td(off) Turn-Off Delay - 41 - ns tf Fall Time - 15 - ns toff Turn-Off Time - - 76 ns VSD Source-to-Drain Diode Voltage ISD = 80A, VGS = 0V - - 1.25 V ISD = 40A, VGS = 0V - - 1.2 V trr Reverse-Recovery Time IF = 80A, dISD/dt = 100A/μs, VDD=32V -54 73 ns Qrr Reverse-Recovery Charge - 42 61 nC |
Аналогичный номер детали - FDD9409_F085 |
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Аналогичное описание - FDD9409_F085 |
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