Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 8. Capacitance Characteristics

.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

0

0.1

0.2

0.3

0.4

0.5

0.6

0

1

2

3

4

5

6

Q , GATE CHARGE (nC)

g

I = 0.22A

D

V

= 5V

DS

10V

0.4

0.8

2

5

10

25

40

0.01

0.03

0.1

0.3

1

V

, DRAIN-SOURCE VOLTAGE (V)

RDS(ON)

LIMIT

DC

DS

10s

100ms

10ms

V

= 4.5V

SINGLE PULSE

R

= 415 °C/W

T = 25°C

θJA

GS

A

1s

0.1

0.3

1

3

10

25

2

3

5

8

15

30

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

0.0001

0.001

0.01

0.1

1

10

200

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=415°C/W

T = 25°C

θJA

A

0.0001

0.001

0.01

0.1

1

10

100

200

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1

2

T - T = P * R

(t)

A

J

P(pk)

θJA

R

(t) = r(t) * R

R

=415

°C/W

θJA

θJA

θJA

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1.

Transient thermal response will change depending on the circuit board design.

FDG6301N_F085 Rev. A

www.fairchildsemi.com

4