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FDD5N50F датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDD5N50F датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDD5N50F Rev. A1 www.fairchildsemi.com 2 Package Marking and Ordering Information T C = 25 oC unless otherwise noted Electrical Characteristics Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD5N50F FDD5N50FTM D-PAK 380mm 16mm 2500 FDD5N50F FDD5N50FTF D-PAK 380mm 16mm 2000 Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC- 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 µA VDS = 400V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 1.75A - 1.25 1.55 Ω gFS Forward Transconductance VDS = 20V, ID = 1.75A (Note 4) -4.3 - S Ciss Input Capacitance VDS = 25V, VGS = 0V f = 1MHz - 490 650 pF Coss Output Capacitance - 66 88 pF Crss Reverse Transfer Capacitance - 5 7.5 pF Qg(tot) Total Gate Charge at 10V VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) -11 15 nC Qgs Gate to Source Gate Charge - 3 - nC Qgd Gate to Drain “Miller” Charge - 5 - nC td(on) Turn-On Delay Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) -13 36 ns tr Turn-On Rise Time - 22 54 ns td(off) Turn-Off Delay Time - 28 66 ns tf Turn-Off Fall Time - 20 50 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 3.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 14 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3.5A - - 1.5 V trr Reverse Recovery Time VGS = 0V, ISD = 5A dIF/dt = 100A/µs (Note 4) -65 - ns Qrr Reverse Recovery Charge - 0.120 - µC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 42mH, IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics |
Аналогичный номер детали - FDD5N50F |
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Аналогичное описание - FDD5N50F |
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