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2SA1608-Y13 датащи(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали 2SA1608-Y13
подробное описание детали  PNP Transistors
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SA1608-Y13 датащи(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
www.kexin.com.cn
1
Transistors
PNP Transistors
2SA1608
Features
High fT : fT=400MHz
Complementary to 2SC3739
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-60
Collector - Emitter Voltage
VCEO
-40
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-500
mA
Collector Power Dissipation
PC
150
mW
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-60
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA,IB=0
-40
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -40 V , IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-0.1
Collector-emitter saturation voltage
VCE(sat) IC=-500 mA, IB=-50 mA
-0.45 -0.75
Base - emitter saturation voltage
VBE(sat) IC=-500 mA, IB=-50 mA
-1
-1.3
hFE(1)
VCE= -2V, IC= -150mA
75
140
300
hFE(2)
VCE= -2V, IC= -500mA
20
50
Turn-on time
ton
25
Storage time
tstg
70
Turn-off time
toff
100
Collector output capacitance
Cob
VCB= -10V,IE=0, f=1MHz
5
8
pF
Transition frequency
fT
VCE= -10V, IC= -20mA
150
400
MHz
DC current gain
(Note.1)
Vcc=-30V,IC=-150mA,
IB1=-IB2=-15mA
ns
V
uA
V
Classification of hfe (1)
Type
2SA1608-Y12
2SA1608-Y13
2SA1608-Y14
Range
75-150
100-200
150-300
Marking
Y12
Y13
Y14
1.Base
2.Emitter
3.Collector


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