SMD Type

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1

Transistors

PNP Transistors

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Features

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Low collector capacitance

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Low collector-emitter saturation voltage

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Closely matched current gain

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Reduces number of components and board space

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Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

-80

Collector - Emitter Voltage

-65

Emitter - Base Voltage

-6

Collector Current - Continuous

-100

Peak Collector Current

single pulse: tp ≤ 1 ms

-200

Peak Base Current

single pulse: tp ≤ 1 ms

-200

Collector Power Dissipation

(Per transistor) *1

200

(Per device) *1

300

Thermal Resistance From Junction To Ambient (Per transistor) *1

625

Thermal Resistance From Junction To Ambient (Per device) *1

416

Thermal Resistance From Junction To Solder Point

230

Junction Temperature

150

Storage Temperature range

-65 to 150

V

℃

mA

mW

℃

/W

*1: Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

2

1

3

5

6

TR1

TR2

4