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MTB080N15J3-0-T3-G датащи(PDF) 2 Page - Cystech Electonics Corp. |
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MTB080N15J3-0-T3-G датащи(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 2/9 MTB080N15J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @ TC=25 °C, VGS=10V 18.0 Continuous Drain Current @ TC=100 °C, VGS=10V ID 12.7 Continuous Drain Current @ TA=25 °C, VGS=10V *2 3.2 Continuous Drain Current @ TA=100 °C, VGS=10V *2 2.0 Continuous Drain Current @ TA=25 °C, VGS=10V *3 2.6 Continuous Drain Current @ TA=100 °C, VGS=10V *3 IDSM 1.6 Pulsed Drain Current *1 IDM 72 Avalanche Current IAS 6.3 A Avalanche Energy @ L=6mH, ID=6.3A, RG=25Ω EAS 119 mJ Total Power Dissipation @TC=25℃ 83 Total Power Dissipation @TC=100℃ PD 42 Total Power Dissipation @TA=25℃ *2 2.5 Total Power Dissipation @TA=100℃ *2 1.0 Total Power Dissipation @TA=25℃ *3 1.7 Total Power Dissipation @TA=100℃ *3 PDSM 0.7 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+175 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2 Thermal Resistance, Junction-to-ambient, max *2 50 Thermal Resistance, Junction-to-ambient, max *3 Rth,j-a 75 °C/W Note : *1 . Pulse width limited by maximum junction temperature *2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper. *3. When the device is on the minimum pad size recommended. *4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. *5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. Characteristics (Tc=25 °C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V, ID=250μA ∆BVDSS/∆Tj - 0.15 - V/ °C Reference to 25 °C, ID=250μA VGS(th) 1.0 - 2.5 V VDS =VGS, ID=250μA GFS *1 - 18 - S VDS =10V, ID=10A IGSS - - ± 100 nA VGS=±20V, VDS=0V |
Аналогичный номер детали - MTB080N15J3-0-T3-G |
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Аналогичное описание - MTB080N15J3-0-T3-G |
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