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IRF1404Z датащи(PDF) 3 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали IRF1404Z
подробное описание детали  N-Channel MOSFET
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRF1404Z датащи(HTML) 3 Page - Guangdong Kexin Industrial Co.,Ltd

  IRF1404Z Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd IRF1404Z Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd IRF1404Z Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd IRF1404Z Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd IRF1404Z Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd IRF1404Z Datasheet HTML 6Page - Guangdong Kexin Industrial Co.,Ltd  
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MOSFET
N-Channel MOSFET
IRF1404Z (KRF1404Z)
■
Typical Characterisitics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
4.5V 20µs PULSE WIDTH
Tj = 175°C
0
40
80
120
160
ID, Drain-to-Source Current (A)
0
40
80
120
160
200
TJ = 25°C
TJ = 175°C
VDS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
TJ = 25°C
TJ = 175°C
VDS = 15V
20µs PULSE WIDTH
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
40
80
120
160
QG Total Gate Charge (nC)
0
4
8
12
16
20
VDS= 32V
VDS= 20V
ID= 75A


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