SI2302DS-3 datasheet(2/4 Pages) KEXIN

номер детали	SI2302DS-3

подробное описание детали	N-Channel Enhancement MOSFET

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MOSFET

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

20

V

VDS=20V, VGS=0V

1

VDS=20V, VGS=0V ,TJ=55 ℃

10

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±8V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

0.6

1.0

V

VGS=4.5V, ID=3.6A

45

85

VGS=2.5V, ID=3.1A

70

115

Forward Transconductance *

gfs

VDS=5V,ID=3.6A

8

S

Input Capacitance

Ciss

300

Output Capacitance

Coss

120

Reverse Transfer Capacitance

Crss

80

Total Gate Charge

Qg

4

10

Gate-Source Charge

Qgs

0.65

Gate-Drain Charge

Qgd

1.5

Turn-On DelayTime

td(on)

7

15

Turn-On Rise Time

tr

55

80

Turn-Off DelayTime

td(off)

16

60

Turn-Off Fall Time

tf

10

25

Continuous Source Current (Diode Conduction)

IS

1.6

A

Diode Forward Voltage

VSD

Is=1.6 A,VGS=0V

0.76

1.2

V

Zero Gate Voltage Drain Current

IDSS

μ

A

VDS=10V,VGS=4.5V,ID=3.6A

nC

ns

mΩ

RDS(On)

Static Drain-Source On-Resistance

VGS=4.5V, VDS=10V, RL=5.5Ω,RGEN=6Ω

ID=3.6A

VGS=0V, VDS=10V, f=1MHz

pF

* Pulse test: PW ≤300us duty cycle≤ 2%

■

Marking

A2*

SI2302DS (KI2302DS)

N-Channel Enhancement MOSFET

Аналогичный номер детали - SI2302DS-3

производитель	номер детали	датащи	подробное описание детали
Guangdong Kexin Industr...	SI2302DS-HF	1Mb / 4P	N-Channel MOSFET
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VBsemi Electronics Co.,...	SI2302DS-T1-GE3	1Mb / 9P	N-Channel 20 V (D-S) MOSFET
	SI2302DS-T1-GE3	1,010Kb / 9P	N-Channel 20 V (D-S) MOSFET
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Аналогичное описание - SI2302DS-3

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Guangdong Kexin Industr...	2N7002E	1Mb / 2P	N-Channel Enhancement MOSFET
Guangdong Kexin Industr...	AO3414	1Mb / 4P	N-Channel Enhancement MOSFET
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SI2302DS-3 датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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Аналогичный номер детали - SI2302DS-3

Аналогичное описание - SI2302DS-3

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