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IRF140 датащи(PDF) 1 Page - Intersil Corporation

номер детали IRF140
подробное описание детали  28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF140 датащи(HTML) 1 Page - Intersil Corporation

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1
File Number
2306.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright
© Intersil Corporation 1999
IRF140
28A, 100V, 0.077 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17421.
Features
• 28A, 100V
•rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Symbol
Packaging
JEDEC TO-204AE
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF140
TO-204AE
IRF140
NOTE: When ordering, use the entire part number.
D
G
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
Data Sheet
March 1999


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