поискавой системы для электроныых деталей |
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IRF9630 датащи(PDF) 5 Page - Intersil Corporation |
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IRF9630 датащи(HTML) 5 Page - Intersil Corporation |
5 / 7 page 4-31 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Typical Performance Curves Unless Otherwise Specified (Continued) 1.25 0.95 0.85 0.75 -40 0 40 80 TJ, JUNCTION TEMPERATURE ( oC) 120 160 1.05 1.15 2000 400 0 0 20 50 1200 VDS, DRAIN TO SOURCE VOLTAGE (V) 1600 800 CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD CISS 10 30 40 COSS CRSS VGS = 0V, f = 1MHz ID, DRAIN CURRENT (A) 0 -3 -6 -9 -12 1.4 2.8 4.2 5.6 7.0 -15 TJ = 125 oC TJ = 25 oC TJ = -55 oC 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX -0.4 -1.0 -1.2 -1.6 -1.8 -0.6 -0.1 -1.0 -10 VSD, SOURCE TO DRAIN VOLTAGE (V) -100 -0.8 -1.4 TJ = 25 oC TJ = 150 oC PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX Qg(TOT), TOTAL GATE CHARGE (nC) 0 8 16 24 40 - 5 0 VDS = -160V - 10 - 15 42 VDS = -100V VDS = -40V ID = -8A IRF9630, RF1S9630SM |
Аналогичный номер детали - IRF9630 |
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Аналогичное описание - IRF9630 |
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