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2SD1819A датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

номер детали 2SD1819A
подробное описание детали  NPN Plastic-Encapsulate Transistor
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2SD1819A датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
2SD1819A
0.1A , 60V
NPN Plastic-Encapsulate Transistor
24
24-Feb-2011 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Top View
A
L
C B
D
G
H
J
F
K
E
1
2
3
1
2
3
1
Base
2
Emitter
Collector
3
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain.
Low collector to emitter saturation voltage VCE(sat).
Complementary to 2SB1218A
APPLICATION
General purpose amplification.
CLASSIFICATION OF hFE
Product-Rank
2SD1819A-Q 2SD1819A-R 2SD1819A-S
Range
160~260
210~340
290~460
Marking
ZQ
ZR
ZS
PACKAGE INFORMATION
Package
MPQ
LeaderSize
SOT-323
3K
7’ inch
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
7
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
150
mW
Thermal Resistance From Junction to Ambient
RθJA
833
°C / W
Junction & Storage temperature
TJ, TSTG
150, -55~150
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector-Base Breakdown Voltage
V(BR)CBO
60
-
-
V
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage V(BR)CEO
50
-
-
V
IC=2mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
7
-
-
V
IE=10µA, IC=0
Collector Cut-Off Current
ICBO
-
-
0.1
µ
A
VCB=20V, IE=0
Base Cut-Off Current
ICEO
-
-
100
µ
A
VCE=10V, IB=0
Emitter Cut-off Current
IEBO
-
-
0.1
µ
A
VEB=7V, IC=0
hFE (1)
160
-
460
VCE=10V, IC=2mA
DC Current Gain
hFE (2)
90
-
-
VCE=2V, IC=100mA
Collector-Emitter Saturation Voltage
VCE(sat)
-
-
0.3
V
IC=100mA, IB=10mA
Transition Frequency
fT
-
150
-
MHz
VCE=10V, IC=2mA, f=200MHz
Collector Output Capacitance
Cob
-
3.5
-
pF
VCB=10V, IE=0, f=1MHz
SOT-323
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.80
2.20
G
0.100 REF.
B
1.80
2.45
H
0.525 REF.
C
1.15
1.35
J
0.08
0.25
D
0.80
1.10
K
-
-
E
1.20
1.40
L
0.650 TYP.
F
0.20
0.40


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