SI2309DS datasheet(1/5 Pages) KEXIN

номер детали	SI2309DS

подробное описание детали	P-Channel Enhancement MOSFET

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MOSFET

P-Channel Enhancement MOSFET

SI2309DS (KI2309DS)

■

Features

●

VDS (V) =-60V

●

ID =-1.25 A (VGS =-10V)

●

RDS(ON) ＜ 340mΩ (VGS =-10V)

●

RDS(ON) ＜ 550mΩ (VGS =-4.5V)

0.4 +0.1

-0.1

2.9 +0.1

-0.1

0.95 +0.1

-0.1

1.9 +0.1

-0.1

1.Gate

2.Source

3.Drain

1

2

3

Unit: mm

SOT-23

0.1 +0.05

-0.01

G

S

D

2

3

1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-60

Gate-Source Voltage

VGS

±20

Continuous Drain Current *1,*2

Ta = 25℃

-1.25

Ta = 70℃

-0.85

Pulsed Drain Current

IDM

-8

Avalanche Current

L=0.1mH

IAS

-5

Power Dissipation *1,*2

Ta = 25℃

1.25

Ta = 70℃

0.8

Thermal Resistance.Junction- to-Ambient t ≤5 sec

100

Steady State *1

166

Thermal Resistance.Junction- to-Case *1

RthJC

60

Junction Temperature

TJ

150

Storage Temperature Range

Tstg

-55 to 150

RthJA

ID

A

PD

W

V

℃

/W

℃

*1 Surface Mounted on FR4 Board.

*2 t ≤ 5 sec.

Аналогичный номер детали - SI2309DS

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI2309DS	41Kb / 4P	P-Channel 60-V (D-S) MOSFET Rev. B, 05-Aug-02
Vishay Siliconix	SI2309DS	95Kb / 5P	P-Channel 60-V (D-S) MOSFET S-72216-Rev. C, 22-Oct-07
Guangdong Kexin Industr...	SI2309DS-3	1Mb / 5P	P-Channel Enhancement MOSFET
	SI2309DS-HF	1Mb / 5P	P-Channel MOSFET
	SI2309DS-HF-3	1Mb / 5P	P-Channel MOSFET

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Аналогичное описание - SI2309DS

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SeCoS Halbleitertechnol...	SMG2345P	71Kb / 2P	P-Channel Enhancement MOSFET
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	SMG2361P	450Kb / 4P	P-Channel Enhancement MOSFET
Guangdong Kexin Industr...	AO3409-3	1Mb / 4P	P-Channel Enhancement MOSFET
	AO3409-HF-3	1Mb / 4P	P-Channel Enhancement MOSFET
	AO3419-3	1Mb / 4P	P-Channel Enhancement MOSFET
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Аналогичный номер детали - SI2309DS

Аналогичное описание - SI2309DS

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