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IRFP247 датащи(PDF) 1 Page - Intersil Corporation |
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IRFP247 датащи(HTML) 1 Page - Intersil Corporation |
1 / 7 page 5-1 Semiconductor Features • 15A and 14A, 275V and 250V •rDS(ON) = 0.28Ω and 0.34Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • 275V, 250VDC Rated, 120VAC Line System Operation • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17423. Symbol Packaging JEDEC STYLE TO-247 Ordering Information PART NUMBER PACKAGE BRAND IRFP244 TO-247 IRFP244 IRFP245 TO-247 IRFP245 IRFP246 TO-247 IRFP246 IRFP247 TO-247 IRFP247 NOTE: When ordering, include the entire part number. D G S SOURCE DRAIN DRAIN (FLANGE) GATE July 1998 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 File Number 2211.2 IRFP244, IRFP245, IRFP246, IRFP247 15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs |
Аналогичный номер детали - IRFP247 |
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Аналогичное описание - IRFP247 |
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