SI9926DY-S datasheet(2/4 Pages) KEXIN

номер детали	SI9926DY-S

подробное описание детали	Dual N-Channel MOSFET

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MOSFET

Dual N-Channel MOSFET

SI9926DY (KI9926DY)

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

20

V

Zero Gate Voltage Drain Current

IDSS

VDS=16V, VGS=0V

1

μ

A

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±10V

±

100

nA

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA (Note.1)

0.5

1.5

V

VGS=4.5V, ID=6.5A

30

VGS=4.5V, ID=6.5A TJ=125℃

50

VGS=2.5V, ID=5.4A

43

On State Drain Current

ID(ON)

VGS=4.5V, VDS=5V

(Note.1)

15

A

Forward Transconductance

gFS

VDS=5V, ID=3A

(Note.1)

11

S

Input Capacitance

Ciss

700

Output Capacitance

Coss

175

Reverse Transfer Capacitance

Crss

85

Total Gate Charge

Qg

7

10

Gate Source Charge

Qgs

1.2

Gate Drain Charge

Qgd

1.9

Turn-On DelayTime

td(on)

8

16

Turn-On Rise Time

tr

10

18

Turn-Off DelayTime

td(off)

18

29

Turn-Off Fall Time

tf

5

10

Maximum Body-Diode Continuous Current

IS

1.3

A

Diode Forward Voltage

VSD

IS=1.3A,VGS=0V (Note.1)

1.2

V

ns

mΩ

VGS=4.5V, VDS=10 V, ID=1A,RG=6Ω

(Note.1)

RDS(On)

Static Drain-Source On-Resistance

(Note.1)

VGS=0V, VDS=10V, f=1MHz

VGS=4.5V, VDS=10V, ID=3A (Note.1)

pF

nC

Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%

■

Marking

9926

KA****

Marking

Аналогичный номер детали - SI9926DY-S

производитель	номер детали	датащи	подробное описание детали
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SI9926DY-S датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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Аналогичный номер детали - SI9926DY-S

Аналогичное описание - SI9926DY-S

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