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1N5400G датащи(PDF) 1 Page - Yea Shin Technology Co., Ltd |
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1N5400G датащи(HTML) 1 Page - Yea Shin Technology Co., Ltd |
1 / 2 page HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 3.0 Amperes FE ATURES • High current capability • Plastic package has Underwriters Laboratory Flammability Classi fication 94V -O u tilizing Flame Retardan t E poxy Molding Compound • Exceeds environmental standards of MIL-S-19 500/2 28 • Low leakage • High temperature soldering : 260 OC / 10 seconds at terminals • Pb free product at available : 99% Snabove meet RoHS env ironment subst ance directive request MECHAN ICAL D ATA • Case: Molded plastic , DO-201AD • Terminals: Plated axial leads, solderable per M I L-STD- 202, Method 208 • Polari ty: Color band denotes cathode • Mounting Position : Any MAXIMUM RATINGS AND ELECTRICAL CH ARACTERISTI CS Ratings at 25 a mbient temperature unless otherwi se speci fied. Single phase , half wave, 60 Hz, r esi stive or inductive load . For capacitive load, derat e current by 20%. 1N5400G Units Maximum Recurrent Peak Rev erse Voltage 50 100 200 300 400 500 600 800 1000 V Maximu m RMS Voltage 35 70 140 210 280 350 420 560 700 V Maximum DC Blocking Voltage 50 100 200 300 400 500 600 800 1000 V Maximum Average Forw ard Rectified Current .375 "(9 .5mm) Lead Lengthat TA= 55 3.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 150 A Maximum Instataneous Forward Voltage at 3.0A DC 1.1 V Maximum Reverse Current TA = 2 5 at Rated DC Blocking Voltage TA= 125 5.0 100 uA Maximum Full Load Reverse Current Full Cycle Average 5"(12.5mm)lead lengthat TL= 105 0.5 mA Typical Junction capacitance (N ote1) 30 pF Typical Thermal Resistance (N ote2) 20.0 Operating and Storage Temperature Range -55 TO + 150 NOTES: 1. Measured at 1 MHz and applied reverse voltage o f 4.0 volts. 2. Thermal Resista nce Junction to Ambient at 0.375"(9.5 mm) lead length, P.C.B. mounted w ith 0.8×0.8"(20×2 0mm) copper heatsinks. .375 (9.5) .285 ( 7.2) .210 (5. 3) .188 (4.8) .052 (1.3) .048 (1.2) DIA. DIA. DO-201AD Unit:inch(mm) 1.0 (25.4) MIN. 1.0 (25.4) MIN. OC OC OC OC OC OC OC 1N5401G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G SEMICONDUCTOR http://www.yeashin.com 1 REV.03 20150105 DATA SHEET 1N5400G THRU 1N5408G symbols I(AV) VRRM VRMS V D C I FSM VF IR CJ R JA ө TJ ,T STG |
Аналогичный номер детали - 1N5400G |
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Аналогичное описание - 1N5400G |
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