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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PZT3019 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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PZT3019 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  Any changing of specification will not be informed individual PZT3019 NPN Transistor Epitaxial Planar Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente The PZT3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. 3 0 1 9 Date Code B C E Description ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified Parameter Symbol Min Typ. Max Uni Test Conditions Collector-Base Breakdown Voltage BVCBO - - V IC=100µA IC=30mA IE=100 µA VCB= 90V VEB= IC= VCE= V, IC= VCE= V, IC= 50mA, VCB= 10 , f=1MHz,IE=0 f=100MHz BVCEO 80 - - V BVEBO - - V ICBO - - 50 nA IEBO - - nA VCE(sat) - - VBE(sat) V hFE1 - hFE2 300 fT - MH Cob - 15 12 pF z Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance t 140 7 50 100 90 50 0.2 1.1 V 5V 150mA,IB=15mA IC=150mA,IB=15mA 10 0.1mA VCE= 50m V C - - - - 100 50 o - - hFE3 hFE4 hFE5 - - - - - - V, IC= 10 10mA VCE= V, IC= 10 150mA VCE= V, IC= 10 500mA VCE= V, IC= 10 1000mA MAXIMUM RATINGS Symbol Parameter Value Collector Current 7 2 55~+150 80 140 1 - IC Tstg TJ, Junction and Total Power Dissipation VEBO PD Emitter-Base Voltage V A W Storage Temperature C O VCEO Collector-Emitter Voltage V VCBO Collector-Base Voltage V Units ABSOLUTE Ta=25C o 5 1.40 1.80 Mi llimeter Mi llimeter SOT-223 01-Jun-2002 Rev. A Page 1 of 1 REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13 C TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0 C 10 C 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 |
Аналогичный номер детали - PZT3019_15 |
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Аналогичное описание - PZT3019_15 |
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