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IRF3710 датащи(PDF) 4 Page - Kersemi Electronic Co., Ltd.

номер детали IRF3710
подробное описание детали  Advanced Process Technology
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производитель  KERSEMI [Kersemi Electronic Co., Ltd.]
домашняя страница  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF3710 датащи(HTML) 4 Page - Kersemi Electronic Co., Ltd.

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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds+ Cgd
0
20
40
60
80
100
0
2
5
7
10
12
Q , Total Gate Charge (nC)
G

I
=
D
28A

V
= 20V
DS
V
= 50V
DS
V
= 80V
DS
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
TJ = 25°C
TJ = 175°C
VGS = 0V
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF3710
2014-8-10
4
www.kersemi.com


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