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IRF3315S датащи(PDF) 2 Page - International Rectifier |
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IRF3315S датащи(HTML) 2 Page - International Rectifier |
2 / 10 page IRF3315S/L Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.187 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.082 Ω VGS = 10V, ID = 12A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 17 ––– ––– S VDS = 50V, ID = 12A ––– ––– 25 µA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 95 ID = 12A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 120V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 47 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 9.6 ––– VDD = 75V tr Rise Time ––– 32 ––– ID = 12A td(off) Turn-Off Delay Time ––– 49 ––– RG = 5.1Ω tf Fall Time ––– 38 ––– RD = 5.9Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 1300 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance VDD = 25V, starting TJ = 25°C, L = 4.9 mH RG = 25Ω, IAS = 12A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD ≤ 12A, di/dt ≤ 140A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF3315 data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V trr Reverse Recovery Time ––– 174 260 ns TJ = 25°C, IF = 43A Qrr Reverse Recovery Charge ––– 1.2 1.7 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics S D G A 21 84 |
Аналогичный номер детали - IRF3315S |
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Аналогичное описание - IRF3315S |
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