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IRF3711 датащи(PDF) 2 Page - International Rectifier |
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IRF3711 датащи(HTML) 2 Page - International Rectifier |
2 / 11 page 2 www.irf.com IRF3711/3711S/3711L Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.88 1.3 V TJ = 25°C, IS = 30A, VGS = 0V ––– 0.82 ––– TJ = 125°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 16A, VR=10V Qrr Reverse Recovery Charge ––– 61 92 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 48 72 ns TJ = 125°C, IF = 16A, VR=10V Qrr Reverse Recovery Charge ––– 65 98 nC di/dt = 100A/µs Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 460 mJ IAR Avalanche Current ––– 30 A Avalanche Characteristics S D G Diode Characteristics 110 440 A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 53 ––– ––– SVDS = 16V, ID = 30A Qg Total Gate Charge ––– 29 44 ID = 15A Qgs Gate-to-Source Charge ––– 7.3 ––– nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 8.9 ––– VGS = 4.5V Qoss Output Gate Charge ––– 33 ––– VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 12 ––– VDD = 10V tr Rise Time ––– 220 ––– ID = 30A td(off) Turn-Off Delay Time ––– 17 ––– RG = 1.8Ω tf Fall Time ––– 12 ––– VGS = 4.5V Ciss Input Capacitance ––– 2980 ––– VGS = 0V Coss Output Capacitance ––– 1770 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 280 ––– ƒ = 1.0MHz VSD Diode Forward Voltage Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA ––– 4.7 6.0 VGS = 10V, ID = 15A ––– 6.2 8.5 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
Аналогичный номер детали - IRF3711 |
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Аналогичное описание - IRF3711 |
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