поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

IRF3711 датащи(PDF) 2 Page - International Rectifier

номер детали IRF3711
подробное описание детали  Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Download  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF3711 датащи(HTML) 2 Page - International Rectifier

  IRF3711 Datasheet HTML 1Page - International Rectifier IRF3711 Datasheet HTML 2Page - International Rectifier IRF3711 Datasheet HTML 3Page - International Rectifier IRF3711 Datasheet HTML 4Page - International Rectifier IRF3711 Datasheet HTML 5Page - International Rectifier IRF3711 Datasheet HTML 6Page - International Rectifier IRF3711 Datasheet HTML 7Page - International Rectifier IRF3711 Datasheet HTML 8Page - International Rectifier IRF3711 Datasheet HTML 9Page - International Rectifier Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 11 page
background image
2
www.irf.com
IRF3711/3711S/3711L
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
–––
p-n junction diode.
–––
0.88
1.3
V
TJ = 25°C, IS = 30A, VGS = 0V
–––
0.82
–––
TJ = 125°C, IS = 30A, VGS = 0V
trr
Reverse Recovery Time
–––
50
75
ns
TJ = 25°C, IF = 16A, VR=10V
Qrr
Reverse Recovery Charge
–––
61
92
nC
di/dt = 100A/µs
trr
Reverse Recovery Time
–––
48
72
ns
TJ = 125°C, IF = 16A, VR=10V
Qrr
Reverse Recovery Charge
–––
65
98
nC
di/dt = 100A/µs
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
–––
460
mJ
IAR
Avalanche Current
–––
30
A
Avalanche Characteristics
S
D
G
Diode Characteristics
110
440
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
53
–––
–––
SVDS = 16V, ID = 30A
Qg
Total Gate Charge
–––
29
44
ID = 15A
Qgs
Gate-to-Source Charge
–––
7.3
–––
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.9
–––
VGS = 4.5V
Qoss
Output Gate Charge
–––
33
–––
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
12
–––
VDD = 10V
tr
Rise Time
–––
220
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
17
–––
RG = 1.8Ω
tf
Fall Time
–––
12
–––
VGS = 4.5V
Ciss
Input Capacitance
–––
2980 –––
VGS = 0V
Coss
Output Capacitance
–––
1770 –––
pF
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
280
–––
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
VVGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.022
–––
V/°C
Reference to 25°C, ID = 1mA
–––
4.7
6.0
VGS = 10V, ID = 15A
–––
6.2
8.5
VGS = 4.5V, ID = 12A
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m


Аналогичный номер детали - IRF3711

производительномер деталидатащиподробное описание детали
logo
Inchange Semiconductor ...
IRF3711 ISC-IRF3711 Datasheet
338Kb / 2P
   N-Channel MOSFET Transistor
logo
International Rectifier
IRF3711LPBF IRF-IRF3711LPBF Datasheet
291Kb / 12P
   HEXFET Power MOSFET
IRF3711LPBF IRF-IRF3711LPBF Datasheet
292Kb / 12P
   High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
IRF3711PBF IRF-IRF3711PBF Datasheet
291Kb / 12P
   HEXFET Power MOSFET
IRF3711PBF IRF-IRF3711PBF Datasheet
292Kb / 12P
   High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
More results

Аналогичное описание - IRF3711

производительномер деталидатащиподробное описание детали
logo
International Rectifier
IRFR3711 IRF-IRFR3711 Datasheet
239Kb / 10P
   Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A??
IRFR3704 IRF-IRFR3704 Datasheet
115Kb / 9P
   Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A??
IRF7457 IRF-IRF7457 Datasheet
120Kb / 8P
   Power MOSFET(Vdss=20V, Rds(on)max=7.0mohm, Id=15A)
IRF7459 IRF-IRF7459 Datasheet
112Kb / 8P
   Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A)
IRF3706 IRF-IRF3706 Datasheet
145Kb / 11P
   Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
IRF7456 IRF-IRF7456 Datasheet
165Kb / 8P
   Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)
IRFR3706 IRF-IRFR3706 Datasheet
133Kb / 10P
   Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A??
IRF3704 IRF-IRF3704 Datasheet
125Kb / 10P
   Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A??
IRL3714 IRF-IRL3714 Datasheet
127Kb / 11P
   Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
IRFP064N IRF-IRFP064N Datasheet
107Kb / 8P
   Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com