IRF5Y5305CM datasheet(1/7 Pages) IRF

номер детали	IRF5Y5305CM

подробное описание детали	POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*)

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производитель	IRF [International Rectifier]

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -10V, TC = 25°C

Continuous Drain Current

-18*

ID @ VGS = -10V, TC = 100°C Continuous Drain Current

-15

IDM

Pulsed Drain Current ➀

-72

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

160

mJ

IAR

Avalanche Current ➀

-16

A

EAR

Repetitive Avalanche Energy ➀

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

3.0

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10sec)

Weight

4.3 (Typical)

g

oC

A

11/3/00

www.irf.com

1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF5Y5305CM

-55V

0.065

Ω -18A*

For footnotes refer to the last page

TO-257AA

HEXFET® POWER MOSFET

IRF5Y5305CM

THRU-HOLE (TO-257AA)

55V, P-CHANNEL

Fifth Generation HEXFET®

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Light Weight

* Current is limited by package

PD - 94028

Аналогичный номер детали - IRF5Y5305CM

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF5Y5305CM	110Kb / 7P	Avalanche Energy Ratings
International Rectifier	IRF5Y5305CM	110Kb / 7P	Avalanche Energy Ratings

More results

Аналогичное описание - IRF5Y5305CM

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF5NJ5305	118Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)
	IRFRU5305	156Kb / 10P	Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)
	IRFRU5505	108Kb / 10P	Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
	IRF5Y3205CM	103Kb / 7P	POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)
	IRF5YZ48CM	105Kb / 7P	POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
	IRF5N4905	119Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.024ohm, Id=-55A*)
	IRF5M4905	115Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
	IRF5Y9540CM	105Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
	IRF5NJ9540	117Kb / 7P	POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
	IRFZ24N	123Kb / 8P	Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

More results

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Аналогичный номер детали - IRF5Y5305CM

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