IRF7103 datasheet(7/9 Pages) IRF

номер детали	IRF7103

подробное описание детали	Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

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производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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IRF7103

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

Fig 13.For N-Channel HEXFETS

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*

Аналогичный номер детали - IRF7103

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF7103IPBF	263Kb / 9P	HEXFET Power MOSFET
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Аналогичное описание - IRF7103

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRFI9620G	169Kb / 6P	Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.0A)
	IRFZ46	165Kb / 6P	Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A)
	C50IRF	164Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
	IRL3102S	90Kb / 8P	Power MOSFET(Vdss=20V, Rds(on)=0.013w, Id=61A)
	IRLI620G	339Kb / 8P	Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)
	IRFBC20	171Kb / 6P	Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
	IRFD9014	177Kb / 6P	Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A)
	IRFI9634G	120Kb / 8P	Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)
	IRFZ24V	200Kb / 8P	Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A)
	IRFZ44VZ	298Kb / 12P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

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Аналогичный номер детали - IRF7103

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