IRF7523D1

www.irf.com

5

Power Mosfet Characteristics

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0

100

200

300

400

1

10

100

DS

V

, D rain-to -S ourc e V oltage (V )

A

V

= 0 V ,

f = 1 M H z

C

= C

+ C

, C

S H O R TE D

C

= C

C

= C

+ C

GS

iss

g s

gd

ds

rss

g d

o ss

ds

g d

0

4

8

12

16

20

024

68

10

12

Q

, Tota l G ate C h arg e (n C )

G

A

F O R TE ST C IRCUIT

SE E F IG U RE 9

V

= 2 4 V

V

= 1 5 V

I

= 1 .7 A

DS

DS

D

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJC

C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)