IRFP3710 datasheet(1/8 Pages) IRF

номер детали	IRFP3710

подробное описание детали	Power MOSFET(Vdss=100V, Rds(on)=0.025W, Id=57A)

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производитель	IRF [International Rectifier]

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IRFP3710

HEXFET® Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-247 package is preferred for commercial-

industrial applications where higher power levels

preclude the use of TO-220 devices. The TO-247 is

similar but superior to the earlier TO-218 package

because of its isolated mounting hole.

S

D

G

VDSS = 100V

RDS(on) = 0.025W

ID = 57A

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

TO-247AC

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

57

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

40

A

IDM

Pulsed Drain Current

180

PD @TC = 25°C

Power Dissipation

200

W

Linear Derating Factor

1.3

W/°C

VGS

Gate-to-Source Voltage

± 20

V

EAS

Single Pulse Avalanche Energy

530

mJ

IAR

Avalanche Current

28

A

EAR

Repetitive Avalanche Energy

20

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

TJ

Operating Junction and

-55 to + 175

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

RqJC

Junction-to-Case

–––

0.75

RqCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RqJA

Junction-to-Ambient

–––

40

Thermal Resistance

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Аналогичный номер детали - IRFP3710

производитель	номер детали	датащи	подробное описание детали
Inchange Semiconductor ...	IRFP3710	334Kb / 2P	N-Channel MOSFET Transistor
International Rectifier	IRFP3710PBF	233Kb / 9P	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )
	IRFP3710PBF	234Kb / 9P	ADVANCED PROCESS TECHNOLOGY
	IRFP3710PBF	234Kb / 9P	ADVANCED PROCESS TECHNOLOGY

More results

Аналогичное описание - IRFP3710

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF3710S	184Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)
	IRF3710	94Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)
	IRF3710SPBF	279Kb / 11P	HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )
	IRFP3710PBF	233Kb / 9P	HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.025廓 , ID = 57A )
	IRFZ44VZ	298Kb / 12P	Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)
	IRFP044	170Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
	IRFZ44VZPBF	355Kb / 13P	HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )
	IRF9510S	176Kb / 6P	Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-4.0A)
	IRF520VS	129Kb / 10P	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
	IRC540	222Kb / 8P	Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

More results

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Аналогичный номер детали - IRFP3710

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